IndiumV3, Main, Repository, bibRecord, 004469

Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor

Identifieur interne : 004469 ( Main/Repository ); précédent : 004468; suivant : 004470

Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor

Auteurs : RBID : Pascal:10-0391037

Descripteurs français

Pascal (Inist)
- Traitement signal, Matrice détecteur, Matrice plan focal, Dispositif microélectromécanique, Imagerie, Rayonnement IR, Propriété optique, Température ambiante, Dépendance température, Composé ternaire, Gallium Arséniure, Indium Arséniure, Matériau capteur, Silicium, Bolomètre, As Ga In, InGaAs, HgCdTe, 0130C, 0757, 8585, 0757K.

English descriptors

KwdEn :
- Ambient temperature, Bolometers, Dectector arrays, Focal plane arrays, Gallium Arsenides, Imagery, Indium Arsenides, Infrared radiation, Microelectromechanical device, Optical properties, Sensor materials, Signal processing, Silicon, Temperature dependence, Ternary compounds.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers.

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Pascal:10-0391037

Le document en format XML

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<term>Gallium Arsenides</term>
<term>Imagery</term>
<term>Indium Arsenides</term>
<term>Infrared radiation</term>
<term>Microelectromechanical device</term>
<term>Optical properties</term>
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<term>Signal processing</term>
<term>Silicon</term>
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<term>Ternary compounds</term>
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<term>Matrice plan focal</term>
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<term>Propriété optique</term>
<term>Température ambiante</term>
<term>Dépendance température</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Matériau capteur</term>
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<term>As Ga In</term>
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<front><div type="abstract" xml:lang="en">SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers.</div>
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Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor

Development of Low Dark Current SiGe-Detector Arrays for Visible-NIR Imaging Sensor

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